High-thermal-conductivity AlN materials

30μm Aluminum Nitride (AlN) Ceramic Microspheres are high-performance inorganic non-metallic materials exhibiting outstanding thermal conductivity, electrical insulation, high-temperature resistance, and chemical stability. Their micron-scale spherical structure enables broad application prospects in advanced electronic packaging, composite reinforcement, thermal interface materials, and other fields. Key Features of 30μm Aluminum Nitride (AlN) Ceramic Microspheres: High Thermal Conductivity – With 170-200 W/(m·K) thermal conductivity, AlN microspheres significantly enhance heat dissipation in thermal interface materials (TIMs) and electronic packaging. Excellent Electrical Insulation – Ultra-high resistivity (>10¹⁴ Ω·cm) makes these AlN fillers ideal for high-voltage applications, PCB substrates, and insulating coatings. High-Temperature Resistance – Melting point of 2200°C ensures stability in extreme environments, suitable for aerospace, power electronics, and LED heat sinks. Low CTE (4.5×10⁻⁶/°C) – Matches semiconductor materials (Si, GaN, SiC), reducing thermal stress in chip packaging and power modules. High Purity & Chemical Stability – Corrosion-resistant and acid/alkali-proof, perfect for harsh industrial applications and chemical environments. Uniform Spherical Structure – Narrow particle distribution (D50≈30μm) ensures superior flowability and even dispersion in polymers, composites, and 3D printing materials.