thermal interface materials (TIMs)

30μm Aluminum Nitride (AlN) Ceramic Microspheres are high-performance inorganic non-metallic materials exhibiting outstanding thermal conductivity, electrical insulation, high-temperature resistance, and chemical stability. Their micron-scale spherical structure enables broad application prospects in advanced electronic packaging, composite reinforcement, thermal interface materials, and other fields. Key Features of 30μm Aluminum Nitride (AlN) Ceramic Microspheres: High Thermal Conductivity – With 170-200 W/(m·K) thermal conductivity, AlN microspheres significantly enhance heat dissipation in thermal interface materials (TIMs) and electronic packaging. Excellent Electrical Insulation – Ultra-high resistivity (>10¹⁴ Ω·cm) makes these AlN fillers ideal for high-voltage applications, PCB substrates, and insulating coatings. High-Temperature Resistance – Melting point of 2200°C ensures stability in extreme environments, suitable for aerospace, power electronics, and LED heat sinks. Low CTE (4.5×10⁻⁶/°C) – Matches semiconductor materials (Si, GaN, SiC), reducing thermal stress in chip packaging and power modules. High Purity & Chemical Stability – Corrosion-resistant and acid/alkali-proof, perfect for harsh industrial applications and chemical environments. Uniform Spherical Structure – Narrow particle distribution (D50≈30μm) ensures superior flowability and even dispersion in polymers, composites, and 3D printing materials.

Aluminum Nitride (AlN) thermal filler is a high-performance ceramic material widely used in thermal management applications due to its exceptional properties. Here’s a detailed breakdown of its functional roles: 1. Heat Dissipation (Primary Function) High Thermal Conductivity (~170-200 W/mK) – Efficiently transfers heat away from hotspots in electronic components (e.g., CPUs, power modules, LEDs), making AlN powder ideal for high thermal conductivity fillers. Reduces Thermal Resistance – Improves heat flow in composites (e.g., thermal interface materials (TIMs), epoxy resins), enhancing performance in electronic cooling solutions. 2. Electrical Insulation Dielectric Strength (>15 kV/mm) – Prevents electrical short circuits while conducting heat, critical for high-voltage applications (e.g., power electronics, EV batteries), where AlN ceramic filler ensures reliability. 3. Thermal Expansion Matching CTE (Coefficient of Thermal Expansion) ~4.5 ppm/K – Closely matches silicon and semiconductors, minimizing stress in bonded interfaces (e.g., chip packaging), making AlN single crystal filler a preferred choice for semiconductor thermal management. By incorporating ultra-pure AlN filler or nanoscale AlN powder, manufacturers can optimize thermal conductivity while maintaining electrical insulation, making it a top choice for advanced thermal management  ceramic materials.